• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a memory cell formed in a semiconductor substrate (SUB), comprising a selection gate (SGC) extending vertically in a trench (TR) formed in the substrate, and isolated from the substrate by a first layer of gate oxide (D3), a horizontal floating gate (FG) extending above the substrate and isolated from the substrate by a second gate oxide layer (D1), and a horizontal control gate (CG) s extending above the floating gate, the selection gate (SGC) covering a side face of the floating gate, the floating gate being separated from the selection gate only by the first gate oxide layer (D3), and separated from a vertical channel region (CH2) extending in the substrate along the selection gate only by the second gate oxide layer.
    公开号:FR3030883A1
    申请号:FR1462642
    申请日:2014-12-17
    公开日:2016-06-24
    发明作者:Arnaud Regnier；Jean-Michel Mirabel；Stephan Niel；Rosa Francesco La
    申请人:STMicroelectronics Rousset SAS；
    IPC主号:
    专利说明:

    [0001] The present invention relates to non-volatile electrically Erasable Programmable Read-Only Memory (EEPROM) type erasable and electrically programmable memories. The present invention more particularly relates to a non-volatile memory, comprising memory cells each comprising a floating gate transistor and a selection transistor gate. Several solutions have been implemented to miniaturize such memory cells. Thus, the memory cells have been grouped into pairs of so-called "twin" memory cells to share a single selection transistor. FIG. 1 is a circuit diagram of a pair of memory cells C11, C12 sharing a selection transistor, belonging to two adjacent word lines W <i>, W <i + 1> of a memory plane. The memory cells C11, C12 are accessible for reading and writing via a bit line BL <j>, a common selection line SL <i> and CGL grid control lines <i> , CGL <i + 1>. Each memory cell C11, C12 comprises a floating gate transistor FGT. The control gate CG of the transistor FGT of each cell C11, C12 is connected to the gate control line CGL <i> via a contact C4. The drain regions of the transistors FGT are connected to a bit line BL via contacts C1. Each floating gate transistor FGT furthermore has its source terminal connected to a source line CSL via a respective selection transistor ST. The selection transistors ST share the same selection control gate SGC. The two memory cells C11, C12 are called "binoculars" because they share the same selection control gate SGC and the same bit line BL. The common control gate SGC is connected to the selection line SL <i> common to the two memory cells via a contact C3. The channel regions of the transistors FGT, ST are at the electric potential of the PW box, as represented by dashed lines. Finally, the CSL source line can be connected via a contact C5 to a general source line made in a metal level. It has also been proposed to arrange the selection transistor vertically. FIG. 2 is a schematic sectional view of two twin memory cells C1, C12, sharing a selection transistor vertical gate SGC, common to two twin memory cells. The memory cells C11, C12 are formed in a PW box of conductivity type P. The PW box is formed in a semiconductor plate called "wafer" WF. The PW chamber is isolated from the rest of the wafer WF by an insulating layer nO doped N surrounding the entire housing. Each memory cell C11, C12 comprises a floating gate transistor FGT and a selection transistor ST. Each floating gate transistor FGT comprises a drain region n1, a source region n2, a floating gate FG, a state control gate CG, and a channel region CH1 extending under the floating gate FG between the regions drain n1 and source n2. The vertical selection gate SGC is buried in the substrate PW and isolated from the latter via a gate oxide layer D3, for example made of silicon dioxide SiO2, forming the gate oxide of the selection transistor ST. . Region n2 extends along an upper edge of the buried vertical grid SGC. The SGC gate reaches the region n0 forming a source region nO common to the selection transistors ST, and thus forms a source line CSL of the selection transistors ST. Each selection transistor ST thus comprises a drain region common to the source region n2 of the floating gate transistor FGT of its cell, the common source region nO, and a channel region CH2 extending vertically along the gate SGC between n2 and nO source regions. Regions n1, n2 are generally formed by N-doping of the PW substrate. The floating gates FG are generally made of polycrystalline silicon of level 1, or "polyl", and are formed on the substrate PW by means of a gate oxide layer Di. The CG state control grids are generally made of polycrystalline silicon of level 2, or "poly2". Each state control gate CG is formed on one of the floating gates FG previously covered with a gate oxide layer D2. The SGC gate is formed in a trench filled with level 0 polycrystalline silicon, or "poly0", isolated from the substrate by the gate oxide layer D3. According to the manufacturing method adopted, the conducting trench forming the SGC grid may have no electrical discontinuity. It can then be used directly as word line WL.
    [0002] The two memory cells C11, C12 are covered by a dielectric insulating material DO, which may also be silicon dioxide 5iO2. The drain regions n1 of the floating gate transistors FGT are connected to the same bit line BL via a contact C1 passing through the insulator DO.
    [0003] Such memory cells are erased or programmed by the channel, that is to say by carrying the substrate at a positive erase or negative programming voltage causing the extraction of electric charges from their floating gates or the injection of electric charges in their floating gates, by Fowler-Nordheim effect or by injection of hot electrons.
    [0004] More particularly, the erasure of a memory cell is ensured by combining the positive voltage applied to the substrate with a negative voltage applied to the control gate CG of its floating gate transistor, while the control gate of the floating gate transistor of the twin memory cell receives a positive cancellation inhibition voltage to prevent it being simultaneously erased. Similarly, the programming of a memory cell is ensured by combining a negative voltage applied to the bit line BL and the substrate PW to a positive voltage applied to the control gate CG of its floating gate transistor, while the gate The floating gate transistor of the twin memory cell receives a negative programming inhibit voltage to prevent it from being simultaneously programmed. Finally, the reading of a memory cell is ensured by applying a positive voltage to the control gate of its floating gate transistor, as well as a positive voltage to the corresponding bit line, while the twin memory cell, which is connected to the same bit line, receives on its control gate a negative reading inhibition voltage to prevent it being simultaneously read. Moreover, for the sake of miniaturization in particular, the technology of Silicon On Insulator (FDS01) totally-insulated silicon thin film transistors has been developed. This technology has several decisive advantages for future technological generations. First of all, thanks to the use of a thin silicon film, the electrostatic control by the channel gate of the CMOS type transistors is very much greater than that of a conventional transistor made on a solid silicon substrate. This excellent control makes it possible on the one hand to improve the performance / consumption compromise of the integrated circuits, and on the other hand offers the FDS01 technology a high potential for miniaturization. Then, compared to the Fin-Shaped Field Effect Transistor (FinFet) technologies, which also have very good electrostatic control, the FDS01 technology represents a technological breakthrough easier to achieve, the transistor being planar with an architecture very close to that of the technologies. conventional. The manufacturing processes are therefore much simpler.
    [0005] It is therefore desirable to produce nonvolatile memory cells in a FDO type substrate in which logic circuits based on CMOS transistors are produced. It is also desirable to further miniaturize the nonvolatile memory cells. It is also desirable to simplify the control of such memory cells.
    [0006] Embodiments relate to a memory cell formed in a semiconductor substrate, comprising a selection gate extending vertically in a trench in the substrate, and isolated from the substrate by a first gate oxide layer, a floating gate horizontal extending above the substrate and isolated from the substrate by a second gate oxide layer, and a horizontal control gate extending above the floating gate. According to one embodiment, the selection gate covers a side face of the floating gate, the floating gate being separated from the selection gate only by the first gate oxide layer, and separated from a vertical channel region s extending in the substrate along the selection gate only by the second gate oxide layer. According to one embodiment, the substrate belongs to a completely deserted silicon-on-insulator wafer, comprising a dielectric layer formed on the substrate and a silicon layer formed on the dielectric layer, the floating gate being formed in the silicon layer, and the second gate oxide layer being formed in the dielectric layer. According to one embodiment, the memory cell comprises a buried layer forming a collective source plane in electrical contact with the vertical channel region, for collecting programming currents from the memory cell and other memory cells formed in the substrate. . Embodiments also relate to a group of memory cells comprising first and second memory cells as defined above, sharing the same vertical selection grid. Embodiments also relate to a memory circuit comprising a memory plane comprising a plurality of memory cells as defined above.
    [0007] Embodiments also relate to a memory circuit comprising at least one memory cell as defined above, and a programming circuit of the memory cell, configured to apply to the substrate, to the vertical selection gate, to the control gate and At drain and source regions of the memory cell, electrical potentials such as hot electrons are injected into the floating gate by the vertical channel region through the second gate oxide layer. Embodiments also relate to a memory circuit comprising at least one memory cell as defined above, and an erase circuit of the memory cell, configured to apply to the substrate, to the vertical selection gate, to the control gate and at drain and source regions of the memory cell, electrical potentials such as electric charges are extracted from the floating gate directly by the vertical selection gate.
    [0008] Embodiments also relate to a method of manufacturing in a semiconductor substrate of an electrically programmable memory cell, the method comprising the steps of: etching a first trench in the substrate, and in a first dielectric layer and a first layer conductor formed on the substrate, depositing on the walls of the first trench a second dielectric layer, depositing on the substrate and in the first trench a second conductive layer and etching the second conductive layer to form a vertical selection grid extending into the first trench, to a plane passing through an upper face of the first conductive layer, depositing on the substrate a third dielectric layer, depositing on the third dielectric layer a third conductive layer, etching a second trench in the third conductive layer, the third dielectric layer, the first conductive layer and the first dielectric layer, and etching a third trench above the vertical selection gate through the third conductive layer and the third dielectric layer, so as to form between the second and third trenches a first stacking a control grid and a floating gate of the memory cell. According to one embodiment, the substrate belongs to a completely deserted silicon-on-insulator wafer, comprising the first dielectric layer and the first conductive layer made of silicon. According to one embodiment, the method comprises a step of etching a fourth trench in the third conductive layer, the third dielectric layer, the first conductive layer and the first dielectric layer, to form a second stack between the third and fourth trenches. a control grid and a floating gate of a twin memory cell sharing the vertical selection grid with the memory cell. According to one embodiment, the method comprises a preliminary step of implanting in the substrate a conductive plane forming a source line for the memory cell. According to one embodiment, the method comprises a step of implanting dopants at the bottom of the second trench to form a drain region of a floating gate transistor.
    [0009] According to one embodiment, the first dielectric layer has a thickness of between 10 and 30 nm and the first conductive layer has a thickness of between 8 and 15 nm. Embodiments also relate to a method of manufacturing an integrated circuit on a semiconductor wafer including the method of manufacturing a memory cell as defined above.
    [0010] Exemplary embodiments of the invention will be described in the following, without limitation in connection with the accompanying figures among which: Figure 1 described above, shows an electrical circuit 5 of a pair of memory cells sharing a common grid 2 is a schematic sectional view of a pair of twin memory cells sharing a common vertical grid of selection transistors, FIG. 3 is a schematic sectional view of a pair of transistors of selection, FIG. twin memory cells sharing a common vertical grid of selection transistors, according to one embodiment, Fig. 4 is a schematic sectional view of the pair of memory cells of Fig. 3, illustrating a method of programming a memory cell according to one embodiment, FIG. 5 is a schematic sectional view of the pair of memory cells of FIG. In a method of erasing the pair of memory cells, according to one embodiment, Figs. 6A-6G are schematic sectional views illustrating steps of a method of manufacturing memory cells, according to one embodiment, the Fig. 7 is a schematic sectional view of a pair of twin memory cells sharing a common vertical grid of selection transistors, according to another embodiment, Fig. 8 is a schematic sectional view of a pair of memory cells. In an exemplary memory circuit comprising memory cells such as those of FIG. 3, FIG. 3 shows two identical memory cells C1, C2, according to one embodiment. The memory cells C1, C2 are formed in a PW substrate of conductivity type P. The substrate is formed by a PW box made in a semiconductor plate called "wafer" WF. The PW box is insulated from the rest of the WF wafer by an N-doped n-insulating layer which surrounds the entire box. The memory cells Ci, C2 comprise a selection transistor vertical gate SGC common to the two memory cells. Each memory cell C1, C2 comprises a floating gate transistor section FGT and a selection transistor section ST. Each floating gate transistor section FGT comprises a drain region ni, and a gate stack comprising a floating gate FG and a state control gate CG separated by a gate oxide layer D2, the floating gate FG being isolated from the PW box by a gate oxide layer D1. According to one embodiment, the vertical selection gate SGC is formed in a trench formed in the box PW and through the gate stacks of the floating gate transistor sections, and extends between a source region n3 common to the sections. of transistor ST and the floating gates FG or the gate oxide layers D2 of the twin cells Ci, C2. The vertical grid SGC covers lateral flanks of the floating gates FG of the memory cells C 1, C 2 and is isolated from these floating gates and from the PW box only by a dielectric layer D 3, for example silicon dioxide 5iO 2, forming the gate oxide sections of selection transistors ST. The source region n3 formed in the PW chamber is in electrical contact with the insulation layer n0 which thus forms a CSL source line of the transistor sections ST. Region n3 extends along two lower edges of the vertical grid SGC. Each selection transistor section ST thus comprises the common source region n3, and a channel region CH2 extending vertically along the selection gate SGC between the floating gate FG and the source region n3. Note that region n3 can be omitted if the SGC selection grid reaches the nO layer. The portions of the lateral flanks of the gate stacks of the FGT floating gate transistor sections not covered by the selection gate SGC may be covered with a dielectric layer D4. SP1, 5P2 spacers may be formed on the D4 layer. Thus, the SP1 spacers are formed above the n1 drain regions and the 5P2 spacers are formed above the SGC selection grid. The spacers SP1, 5P2 may be conventionally formed by deposition on the substrate SUB or on the SGC grid of a dielectric layer, for example silicon dioxide or silicon nitride, and plasma anisotropic etching of this dielectric layer. The twin memory cells C1, C2 are covered by a dielectric insulating material DO, which may also be silicon dioxide SiO 2. Each of the drain regions n1 of the transistor sections FGT of the cells C1, C2 is connected to a common bit line BL via a contact C1 crossing the insulator DO. The regions n 0, n 1, n 3 are generally formed by N-doping of the substrate PW. Grids FG, CG, ST are generally polycrystalline silicon. the conducting trench forming the SGC grid may have no electrical discontinuity (in a direction perpendicular to the plane of the figure). It can then be used directly as word line WL. According to one embodiment, the memory cells C1, C2 are made in a WF wafer of the FDS01 type comprising a SUB semiconductor substrate having an upper face covered with an insulating layer IL, the insulating layer IL being itself coated with an upper active layer AL in a semiconductor material, for example silicon. The PW box and the nO, n1 and n3 regions are formed by implanting dopants in the SUB substrate, the gate oxide layers D1 insulating the floating gates FG of the PW box are formed in the layer IL, and the floating gates FG are formed in the active layer AL. Thus, the SGC gate may be formed in a trench filled with level 0 polycrystalline silicon, or "poly0", isolated from the substrate by the gate oxide layer D3, and the state control gates CG may be made of polycrystalline silicon, level 1, or "poly1" or in a metal layer. FIG. 4 illustrates a hot electron programming operation of the memory cell C1, and provides indicative voltage values applied for this purpose to the memory cells C1, C2. To carry out this operation, the bit line BL is subjected to a voltage BLV for example equal to 4 V, the gate SGC receives a voltage SV for example equal to 1 V, and the control gate CG of the memory cell C1 receives a CGV programming voltage that can be set at 10 V. The PW cabinet and the CSL source line are grounded (GND). Under these conditions, the transistor section FGT of the memory cell C1 and the transistor section ST of the pair of memory cells C1, C2 cooperate for the purpose of injecting electric charges into the floating gate FG through the d-layer. Grid oxide Dl. The selection transistor section ST has a conductive channel CH2 in which a current (represented by an arrow in FIG. 4) is formed comprising electrons with high kinetic energy, known as "hot electrons". When the current 11 reaches the insulating layer IL under the floating gate FG of the cell C1, an injection zone is formed in which certain high energy electrons are injected into the floating gate FG under the effect of a transverse electric field created by the voltage applied to the control gate CG. The transfer of charges from the substrate PW to the floating gate FG (programming) is thus carried out via the channel CH2 of the selection transistor section ST, and by applying a high potential difference (here 10V) on the floating gate FG via the control gate CG, to obtain this transfer of charges. It can be noted that in the twin cell C2, the control gate CG is grounded. Despite the presence of a voltage of 1 V in the selection gate SGC, no current flows in the CH2 channel of the cell C2, since the control gate CG and therefore the floating gate, as well as the PW box and the line CSL source are GND ground. As a result, the cell C2 consumes no current. FIG. 5 illustrates an erasing operation of the memory cell C1, and provides indicative voltage values applied for this purpose to the memory cells C1, C2. To perform this operation, the bit line BL is grounded, the selection gate SGC receives an erase voltage for example equal to 5 V, and the control gate CG of the memory cell C1 receives a programming voltage GVC that can be set to -10V. The PW cabinet and the CSL source line can remain grounded (GND). Under these conditions, the erasure is effected without passing through the PW box, by applying a high electric field (here 10 V) between the selection gate SGC and the floating gate FG of the memory cell to be erased. Thus, the electrons are extracted from the FowlerNordheim tunneling floating gate through the gate oxide layer D3 of the SGC selection grid. The erasure of the twin memory cell C2 is prevented simply by connecting the control gate CG of this memory cell to ground. The erasure of memory cells is thus controlled by the control gate CG. It can therefore be achieved by memory cell page or WL word line. The reading of one of the two memory cells C1, C2 can be ensured by applying a positive voltage to its control gate CG, as well as a positive voltage to the corresponding bit line, while the twin memory cell, which is connected. at the same bit line, receives on its control gate a negative reading inhibition voltage to prevent it being simultaneously read.
    [0011] Thus, the programming and erasing operations are carried out by electron transfer through two different dielectric gate layers, the programming being carried out through the gate oxide layer D1, and the deletion through the gate oxide layer D3. As a result, the memory cells may experience a greater number of programming / erasing cycles than conventional memory cells or those shown in FIG. 2. As a result, the PW box is not stressed during these operations. It should be noted that shallow Shallow Trench Isolation (SI) trenches are formed in the substrate parallel to the BL bit lines to isolate rows or pairs of rows of memory cells from each other. Figure 6A shows a FDS01 WF wafer used to make memory cells. The wafer WF comprises the semiconductor substrate SUB, for example silicon, having an upper surface 25 covered with the dielectric layer IL, the dielectric layer IL being itself covered with the upper active layer AL in a semiconductor material, for example silicon . For 28 nm or lower technologies, the insulating layer IL may have a thickness between 10 and 30 nm and the upper active layer AL may have a thickness of between 8 and 15 nm. During steps S11 shown in FIG. 6B, a dielectric layer IL2 is formed on the surface of the wafer WF. This layer may be formed by deposition or by partial oxidation of the active layer AL. The deep doped layer n0 is implanted deep into the SUB substrate under the dielectric layer IL. This layer is for example the N-type layer for isolating a P type box formed in the substrate SUB. The nO layer will serve as CSL source line to all the memory cells implanted in the substrate, more specifically a collective source plane, able to collect the programming currents of several memory cells. Subsequently, the substrate SUB between the layers n0 and IL is doped to form the PW of conductivity type P. In steps S12 illustrated in FIG. 6C, a hard mask layer HM is formed. on the dielectric layer IL2, by deposition or growth of one or more layers for example of silicon dioxide or silicon nitride. A photoresist mask is then deposited on the HM mask and then developed to form an opening in the resin mask. The HM mask is then etched through the resin mask to form a corresponding opening 1 in the HM mask, and the resin mask is then removed. A trench TR is formed in the layers IL2, AL, IL and in the box PW by etching through the opening 1 in the mask HM. A deep doped pocket forming the region n3 is implanted in the PW chamber via the trench TR in the vicinity of the bottom of the latter. The region n3 is formed by vertical ion implantation, and remains localized in the region of the box located near the bottom of the trench TR. The region n3 extends to the nO doped layer and will thus serve as a source region for the pair of memory cells being formed, whereas the nO doped layer will serve as a CSL source line in the continuity of the source n3. In an alternative embodiment, the region n3 is not implanted and the TR trench is etched to a greater depth so as to reach the nO layer, which will serve as source region and source line. During steps S13 illustrated in FIG. 6D, the hard mask HM is removed and the dielectric layer D3 is formed on the walls of the trench TR and on the surface of the layer IL2, for example by growth of silicon dioxide, to form the gate oxide of the vertical gate SGC. A conductive layer, for example polysilicon, is then deposited on the entire substrate SUB, as well as inside the trench TR to form the vertical grid SGC. The conductive layer is then removed outside the trench TR to the level of the dielectric layer D3 on the layer IL2. During steps S14 illustrated in FIG. 6E, a conductive layer GL is deposited on the dielectric layer D3 and then a hard mask layer HM2. A photoresist mask RL2 is then deposited on the mask HM2, and is developed so as to form openings in the resin mask on either side of the SGC grid. The mask HM2 is then etched through the resin mask so as to form corresponding TR1 trenches in the mask HM2. The trenches TR1 are deepened in the layers GL, IL2, AL, IL, until reaching the upper surface of the box PW, by etching through the mask HM2. The n1 doped regions are implanted in the PW box at the bottom of the TRI trenches. The layers between the trenches TR1 are thus provided to form the gate stacks of the FGT floating gate transistors sections of the twin memory cells. The conductive layer GL that is intended to form the control gates CG, may be polysilicon or metal. During steps S15 illustrated in FIG. 6F, the resin mask RL2 is removed, and a new photoresist mask RL3 is deposited on the mask HM2 and in the trenches TR1, and is then developed to form an opening in the resin mask RL3 above the SGC grid. The mask HM2 is then etched through the resin mask to form a corresponding trench TR2 in the mask HM2, and the resin mask RL3 is removed. The trench TR2 is deepened through the layers GL and IL2 until reaching the upper surface of the SGC grid, by etching through the mask HM2. In steps S16 illustrated in FIG. 6G, the resin mask RL3 and the hard mask HM2 are removed. The dielectric layer D4 is deposited on the layer GL and in the trenches TR, TR2, and the spacers SP1, SP2 can be formed on the walls of the trenches TR1, TR2. The dielectric layer D4 can then be removed from the upper face of the GL layer forming the control gates CG of the FGT floating gate transistor sections. It should be noted that trenches TR and TR2 are not necessarily exactly aligned, or of the same width. In particular, trench TR2 may be narrower on one or both sides than trench TR. In the latter case, the memory cell structure C1 ', C2' shown in FIG. 7 is obtained. The memory cells C1 ', C2' differ from the memory cells C1, C2 in that they comprise a common selection grid SGC not necessarily wider, but extending in part under the gate oxide layer D2. As a result, the floating gate transistors FGT 'of the memory cells C1', C2 'may comprise a gate oxide layer D2 and a control gate CG' wider than their floating gate FG '. The opposite is also possible, the control gate and the gate oxide layer D2 being narrow than the floating gate. When the trench TR2 is narrower than the trench TR, the trench TR2 may be deeper than that shown in Figure 6F and extend as shown in Figure 8, in the layer "poly0" forming the common grid SGC '. It is simply important that the common gate SGC 'remains isolated from the control gates CG' formed in the layer GL. Thus trenches TR1 and TR2 can be formed at the same time. It may also be noted that the manufacturing steps S11 to S16 are perfectly integrated in a process for manufacturing CMOS transistors on an FDSOI type wafer. The manufacture of the memory cells involving additional manufacturing steps only to realize the vertical gate SGC, to form a dielectric layer thickness sufficient to achieve the gate oxide layer D2 between the floating gates FG and control gates CG. Thus, the gate oxide layer D2 can be formed of different layers produced by growth or deposition in various materials, such as silicon dioxide 5iO 2, titanium nitride TiN, a multilayer oxide-nitride oxide structure. (ONO), or high dielectric constant materials such as hafnium silicide, zirconium silicide, hafnium dioxide and zirconium dioxide. The gate oxide layer D2 may also comprise a layer made by successive deposition of the same material. The doped regions n1 are produced simultaneously with doped regions forming the drains and sources of CMOS transistors. If the doping of the n1 doped regions is insufficient to produce the drain regions n1 of the FGT floating gate transistors sections, an additional step of dopant implantation can be provided to produce the nt doped regions between the SP1 spacers (FIG. 6G). . In comparison with the fabrication of memory cells in a conventional semiconductor substrate (FIG. 2), the manufacturing method just described makes it possible to eliminate the steps for producing the gate oxide layer D1 and for producing the floating gates FG by depositing and etching a polysilicon layer. It will be apparent to those skilled in the art that the present invention is susceptible of various other embodiments and applications.
    [0012] In particular, although the formation of memory cells in an FDSOI-type wafer has been described in the foregoing, one embodiment can aim at producing memory cells in a conventional semiconductor substrate. For this purpose, the layers IL, AL in which the layers of gate oxides D1 and the floating gates FG are formed can be deposited on a conventional semiconductor substrate before the formation of the vertical selection gate SGC. In this way, the selection grid SGC can extend as described above, up to the plane in which the upper face of the layer AL extends. On the other hand, although the formation of two twin memory cells has been described in the foregoing, an embodiment of the method according to the invention can aim at producing "unitary" memory cells, that is to say without a twin memory cell sharing the same SGC vertical selection grid. Conversely, embodiments may aim at the collective and simultaneous realization of one or more rows of twin memory cells of the type shown in FIG. 9, for example in the context of the realization of a programmable and erasable MEM1 memory circuit. electrically. The circuit MEM1 is formed on a semiconductor wafer and forms an integrated circuit IC. It comprises twin word lines WL <i>, WL <H> made on the PW substrate, and having twin memory cells sharing the same selection line SL <i>. The selection lines SL and the CGL grid control lines are connected to a word line decoder WLDC which applies to them erase voltages, programming and read memory cells. The bit lines BL connected to the drain regions n1 of the memory cells are connected to a set of programming locks BLT and to a set of read amplifiers SA via a column decoder CDEC. These elements are connected to a control circuit CCT which provides the sequencing of programming and erasing operations in accordance with the methods described above. It can be noted that the prediction of twin memory cells of the type shown in FIG. 3 makes it possible to simplify the WLDC, CDEC and CCT decoders, since the PW box and the CSL source line must always be kept connected to ground and that it is not necessary to apply erase, programming or read inhibition voltages to a memory cell when the memory cell thereof is subject to a programming, erasing operation or reading. It will also be clear to those skilled in the art that a memory cell according to the invention may be made in other technological sectors, the materials mentioned in the foregoing description, in particular silicon, carbon dioxide and the like. silicon, polysilicon, being just examples.20
    权利要求:
    Claims (14)
    [0001]
    REVENDICATIONS1. A memory cell formed in a semiconductor substrate (SUB), comprising a selection gate (SGC) extending vertically in a trench (TR) formed in the substrate, and isolated from the substrate by a first gate oxide layer ( D3), a horizontal floating gate (FG) extending above the substrate and isolated from the substrate by a second gate oxide layer (D1), and a horizontal control gate (CG) extending above of the floating gate (FG), characterized in that the selection gate (SGC) covers a lateral face of the floating gate (FG), the floating gate being separated from the selection gate only by the first layer of gate (D3), and separated from a vertical channel region (CH2) extending in the substrate (SUB) along the selection gate only by the second gate oxide layer (D1).
    [0002]
    The memory cell according to claim 1, wherein the substrate (SUB) belongs to a wafer (WF) of completely deserted silicon-on-insulator type, comprising a dielectric layer (IL) formed on the substrate and a layer of silicon (AL). formed on the dielectric layer (IL), the floating gate (FG) being formed in the silicon layer, and the second gate oxide layer (D1) being formed in the dielectric layer.
    [0003]
    A memory cell according to claim 1 or 2, comprising a buried layer (nO) forming a collective source plane (SL) in electrical contact with the vertical channel region (CH2), for collecting programming currents from the cell memory (C1, C2) and other memory cells formed in the substrate (PW).
    [0004]
    4. A group of memory cells, comprising a first (C1) and a second (C2) memory cells according to one of claims 1 to 3, sharing the same vertical selection grid (SGC).
    [0005]
    5. Memory circuit (IC, MEM1) comprising a memory array comprising a plurality of memory cells (C1, C2) according to one of claims 1 to 4.
    [0006]
    6. Memory circuit (IC, MEM1) comprising at least one memory cell (C1, C2) according to one of claims 1 to 3, and a programming circuit (CCT) for the memory cell, configured to apply to the substrate ( PW), to the vertical selection grid (SGC), to the control gate (CG) and to the drain (n1) and source (nO) regions of the memory cell, electrical potentials such as hot electrons are injected into the floating gate (FG) by the vertical channel region (CH2) through the second gate oxide layer (D1).
    [0007]
    7. Memory circuit (IC, MEM1) comprising at least one memory cell (C1, C2) according to one of claims 1 to 3, and a circuit (CCT) for erasing the memory cell, configured to apply to the substrate (PW), to the vertical selection grid (SGC), to the control gate (CG) and to drain regions (n1) and source (nO) of the memory cell, electrical potentials such as electric charges are extracted from the floating gate (FG) directly by the vertical selection grid (SGC).
    [0008]
    A method of manufacturing in a semiconductor substrate (WF, SUB) an electrically programmable memory cell (C1, C2), the method comprising the steps of: etching a first trench (TR) in the substrate, and a first dielectric layer (IL) and a first conductive layer (AL) formed on the substrate, depositing on the walls of the first trench a second dielectric layer (D3), depositing on the substrate and in the first trench a second conductive layer and etching the second conductive layer to form a vertical selection gate (SGC) extending in the first trench, to a plane passing through an upper face of the first conductive layer, depositing on the substrate a third dielectric layer (IL2) , 3030 883 19 depositing on the third dielectric layer a third conductive layer (GL), etching a second trench (TR1) in the third conductive layer, the third th dielectric layer, the first conductive layer 5 and the first dielectric layer, and etching a third trench (TR2) above the vertical selection gate (SGC) through the third conductive layer and the third dielectric layer, so as to form between the second and third trenches a first stack of a control gate (CG) and a floating gate (FG) of the memory cell.
    [0009]
    9. The method according to claim 8, wherein the substrate (WF) belongs to a wafer (WF) of completely desolated silicon-on-insulator type, comprising the first dielectric layer (IL) and the first conductive layer (AL) made of silicon. .
    [0010]
    The method of claim 8 or 9, including a step of etching a fourth trench (TR1) in the third conductive layer (GL), the third dielectric layer (IL2), the first conductive layer (AL), and the first dielectric layer (IL), to form between the third (TR2) and fourth trenches a second stack of a control gate (CG) and a floating gate (FG) of a twin memory cell (C2) sharing the vertical selection grid (SGC) with the memory cell. 25
    [0011]
    11. Method according to one of claims 8 to 10, comprising a preliminary step of implanting in the substrate a conductive plane (nO) forming a source line (SL) for the memory cell.
    [0012]
    The method according to one of claims 8 to 11, comprising a step of implanting dopants at the bottom of the second trench (TR1) to form a drain region (n1) of a floating gate transistor (FGT). .
    [0013]
    13. Method according to one of claims 8 to 12, wherein the first dielectric layer (IL) has a thickness between 10and 30 nm and the first conductive layer (AL) has a thickness between 8 and 15 nm.
    [0014]
    14. A method of manufacturing an integrated circuit (IC) on a semiconductor wafer (WF) including the method of manufacturing a memory cell according to one of claims 8 to 13.
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    同族专利:
    公开号 | 公开日
    CN105720060A|2016-06-29|
    FR3030883B1|2017-12-22|
    CN110265076A|2019-09-20|
    US9461129B2|2016-10-04|
    US20160181265A1|2016-06-23|
    CN105720060B|2019-05-03|
    US9691866B2|2017-06-27|
    CN205428927U|2016-08-03|
    US20160372561A1|2016-12-22|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US5412600A|1991-10-09|1995-05-02|Mitsubishi Denki Kabushiki Kaisha|Non-volatile semiconductor device with selecting transistor formed between adjacent memory transistors|
    US20040057286A1|2002-09-19|2004-03-25|Chiou-Feng Chen|Self-aligned split-gate NAND flash memory and fabrication process|
    US20040130947A1|2003-01-02|2004-07-08|Der-Tsyr Fan|Flash memory with trench select gate and fabrication process|
    US20050127428A1|2003-12-10|2005-06-16|Nima Mokhlesi|Pillar cell flash memory technology|
    US20130250700A1|2012-03-05|2013-09-26|Stmicroelectronics Sas|Nonvolatile memory comprising mini wells at a floating potential|
    JP3808700B2|2000-12-06|2006-08-16|株式会社東芝|Semiconductor device and manufacturing method thereof|
    DE10204871A1|2002-02-06|2003-08-21|Infineon Technologies Ag|Capacitorless 1-transistor DRAM cell and manufacturing process|
    US20060186456A1|2005-02-18|2006-08-24|Burnett James D|NVM cell on SOI and method of manufacture|
    US7829938B2|2005-07-14|2010-11-09|Micron Technology, Inc.|High density NAND non-volatile memory device|
    US7495279B2|2005-09-09|2009-02-24|Infineon Technologies Ag|Embedded flash memory devices on SOI substrates and methods of manufacture thereof|
    US7329596B2|2005-10-26|2008-02-12|International Business Machines Corporation|Method for tuning epitaxial growth by interfacial doping and structure including same|
    US8901634B2|2012-03-05|2014-12-02|Stmicroelectronics Sas|Nonvolatile memory cells with a vertical selection gate of variable depth|FR3054920B1|2016-08-05|2018-10-26|StmicroelectronicsSas|COMPACT NON-VOLATILE MEMORY DEVICE|
    US9947664B1|2016-10-14|2018-04-17|International Business Machines Corporation|Semiconductor device and method of forming the semiconductor device|
    CN108806751B|2017-04-26|2021-04-09|中芯国际集成电路制造有限公司|Multi-time programmable flash memory cell array, operation method thereof and memory device|
    US10879256B2|2017-11-22|2020-12-29|Taiwan Semiconductor Manufacturing Co., Ltd.|Embedded memory using SOI structures and methods|
    CN109036487B|2018-07-20|2021-03-02|福州大学|Multistage optical memory based on short-channel organic transistor and preparation method thereof|
    US11062745B2|2018-09-27|2021-07-13|Taiwan Semiconductor Manufacturing Company, Ltd.|FDSOI sense amplifier configuration in a memory device|
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    2015-11-23| PLFP| Fee payment|Year of fee payment: 2 |
    2016-06-24| PLSC| Publication of the preliminary search report|Effective date: 20160624 |
    2016-11-21| PLFP| Fee payment|Year of fee payment: 3 |
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    2021-09-10| ST| Notification of lapse|Effective date: 20210806 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1462642A|FR3030883B1|2014-12-17|2014-12-17|VERTICAL SELECTION GRID MEMORY CELL FORMED IN A FDSOI TYPE SUBSTRATE|FR1462642A| FR3030883B1|2014-12-17|2014-12-17|VERTICAL SELECTION GRID MEMORY CELL FORMED IN A FDSOI TYPE SUBSTRATE|
    US14/854,542| US9461129B2|2014-12-17|2015-09-15|Memory cell having a vertical selection gate formed in an FDSOI substrate|
    CN201520749262.8U| CN205428927U|2014-12-17|2015-09-24|Storage location in semiconductor substrate , group of storage location and memory circuit|
    CN201510617909.6A| CN105720060B|2014-12-17|2015-09-24|Memory cell with the vertically selected grid formed in FDSOI substrate|
    CN201910288732.8A| CN110265076A|2014-12-17|2015-09-24|Memory cell with the vertically selected grid formed in FDSOI substrate|
    US15/252,090| US9691866B2|2014-12-17|2016-08-30|Memory cell having a vertical selection gate formed in an FDSOI substrate|
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